Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile
نویسندگان
چکیده
منابع مشابه
Subthreshold current model for short-channel double-gate (DG) MOSFETs with vertical Gaussian doping profile
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ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2016
ISSN: 1229-7607
DOI: 10.4313/teem.2016.17.5.270